Features: `A high-side switch array incorporating an N-channel power MOS FET (1.2 max.) and an 8-channel charge pump`Can directly drive a power load from a microprocessor.`Built-in protection against thermal shutdown protection and overcurrent protection`8-channel access enables space-saving desig...
TPD2005F: Features: `A high-side switch array incorporating an N-channel power MOS FET (1.2 max.) and an 8-channel charge pump`Can directly drive a power load from a microprocessor.`Built-in protection agains...
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Power Switch ICs - Power Distribution Pd 0.8W RDS 1.2Ohm 8-Circuit High Side
Characteristic | Symbol | Rating | Unit |
Supply voltage | VDD | 45 | V |
Input voltage | VIN | − 0.5 ~ 7 | V |
Drain-source voltage | VDS | 60 | V |
Output current | IO | Internally limited |
A |
Power dissipation (operating all channels, ta = 25) |
PT | 0.8 1.2 (Note) |
W |
Single pulse avalanche energy | EAS | 10 | mJ |
Operating temperature | Topr | − 40 ~ 85 | |
Junction temperature | Tj | 150 | |
Storage temperature | Tstg | − 55 ~ 150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
The TPD2005F is an 8-channel high-side switch array for vertical power MOS FET output. A monolithic power IC, TPD2005F can directly drive a power load from a CMOS or TTL logic circuit (such as an MPU). It offers overcurrent and overtemperature protection functions.