TPCM8002-H(TE12L,Q

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Gate Charge (Qg) @ Vgs: 34nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Cut Tape (CT)
Power - Max: 30W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 8-PowerWDFN
Manufacturer: Toshiba
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V
Supplier Device Package: 2-4L1A
Input Capacitance (Ciss) @ Vds: 2846pF @ 10V


Parameters:

Technical/Catalog Information	TPCM8002-H(TE12L,Q
Vendor	Toshiba (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	6.2 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	2846pF @ 10V
Power - Max	30W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	34nC @ 10V
Package / Case	*
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPCM8002 H TE12L,Q TPCM8002HTE12L,Q TPCM8002 HTE12LQDKR ND TPCM8002HTE12LQDKRND TPCM8002-HTE12LQDKR