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TPCM8001-H

Application• Small footprint due to a small and thin package• High-speed switching• Small gate charge: QSW = 6.0 nC (typ.)• Low drain-source ON-resistance: RDS (ON) = 7 m (typ.)• High forward transfer admittance: |Yfs| =36 S (typ.)• Low leakage current: IDSS = 1...

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SeekIC No. : 004526211 Detail

TPCM8001-H: Application• Small footprint due to a small and thin package• High-speed switching• Small gate charge: QSW = 6.0 nC (typ.)• Low drain-source ON-resistance: RDS (ON) = 7 m (ty...

TPCM8001-H Data Sheet

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Part Number:
TPCM8001-H
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Application

• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 6.0 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 7 m (typ.)
• High forward transfer admittance: |Yfs| =36 S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)


Pinout

Connection Diagram


Specifications

Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current DC (Note 1)
ID
20
W
Pulsed (Note 1)
IDP
60
Drain power dissipation (Tc=25)
PD
30
W
Drain power dissipation (t = 10 s)
(Note 2a)
PD
2.3
W
Drain power dissipation (t = 10 s)
(Note 2b)
PD
1.0
W
Single-pulse avalanche energy
(Note 3)
EAS
104
mJ
Avalanche current
IAR
20
V
Repetitive avalanche energy
(Tc=25) (Note 4)
EAR
1.8
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55 to +150

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.


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