TPCA8A01-H(TE12L,Q

MOSFET MOSFET N-Ch/SBD 30V 36A

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TPCA8A01-H(TE12L,Q Picture
SeekIC No. : 00164278 Detail

TPCA8A01-H(TE12L,Q: MOSFET MOSFET N-Ch/SBD 30V 36A

floor Price/Ceiling Price

Part Number:
TPCA8A01-H(TE12L,Q
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.0056 Ohms Configuration : Single Quad Drain Triple Source
Mounting Style : SMD/SMT Package / Case : SOP-8
Packaging : Reel    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.0056 Ohms
Package / Case : SOP-8


Parameters:

Technical/Catalog InformationTPCA8A01-H(TE12L,Q
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C36A
Rds On (Max) @ Id, Vgs5.6 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 1970pF @ 10V
Power - Max45W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs35nC @ 10V
Package / Case2-5Q1A
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPCA8A01 H TE12L,Q
TPCA8A01HTE12L,Q



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