TPCA8003-H Selling Leads, Price trend, TPCA8003-H DataSheet download, circuit diagram from SeekIC.com

Features: • Small footprint due to small and thin package• High speed switching• Small gate charge: Qg = 25 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.)• High forward transfer admittance: |Yfs| = 60S (typ.)• Low leakage current: IDSS = 10 A...

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SeekIC No. : 004526182 Detail

TPCA8003-H: Features: • Small footprint due to small and thin package• High speed switching• Small gate charge: Qg = 25 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.)...

TPCA8003-H Data Sheet

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Part Number:: TPCA8003-H
Supply Ability:: 5000

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Upload time: 2024/11/23

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Features: • Small footprint due to small and thin package• High speed switching•...

Product Details

Description

Features:

• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Q_g = 25 nC (typ.)
• Low drain-source ON resistance: R_{DS (ON)} = 5.1 m (typ.)
• High forward transfer admittance: |Yfs| = 60S (typ.)
• Low leakage current: I_DSS = 10 A (max) (V_DS = 30 V)
• Enhancement mode: V_th = 1.1 to 2.3 V (V_DS = 10 V, I_D= 1 mA)

Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	30	V
Gate-source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	I_D	35	A
Drain current	Pulsed (Note 1)	I_DP	105	A
Drain power dissipation (Tc=25)		P_D	45	W
Drain power dissipation (t = 10 s) (Note 2a)		P_D	2.8	W
Drain power dissipation (t = 10 s) (Note 2b)		P_D	1.6	W
Single pulse avalanche energy (Note 3)		E_AS	159	mJ
Avalanche current		I_AR	35	A
Repetitive avalanche energy (Tc=25) (Note 4)c		E_AR	4.5	mJ
Channel temperature		T_ch	150
Storage temperature range		T_stg	−55 to 150

Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.

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TPCA8003-H

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