TPCA8004-H

Features: • Small footprint due to small and thin package• High speed switching• Small gate charge: Qg =37 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 3.5 m (typ.)• High forward transfer admittance: |Yfs| =80 S (typ.)• Low leakage current: IDSS = 10 A ...

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SeekIC No. : 004526183 Detail

TPCA8004-H: Features: • Small footprint due to small and thin package• High speed switching• Small gate charge: Qg =37 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 3.5 m (typ.)&...

floor Price/Ceiling Price

Part Number:
TPCA8004-H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/26

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Product Details

Description



Features:

• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg =37 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 3.5 m (typ.)
• High forward transfer admittance: |Yfs| =80 S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)



Specifications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

30

V

Drain-gate voltage (RGS = 20 k)

VDGR

30

V

Gate-source voltage

VGSS

±20

V

Drain current

DC (Note 1)

ID

40

A

Pulsed (Note 1)

IDP

120

Drain power dissipation (Tc=25)

PD

45

W

Drain power dissipation (t = 10 s)
(Note 2a)

PD

2.8

W

Drain power dissipation (t = 10 s)
(Note 2b)

PD

1.6

W

Single pulse avalanche energy
(Note 3)

EAS

208

mJ

Avalanche current

IAR

40

A

Repetitive avalanche energy
(Tc=25) (Note 4)

EAR

4.5

mJ

Channel temperature

Tch

150

Storage temperature range

Tstg

−55 to 150

Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.




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