Features: • Small footprint due to small and thin package• High speed switching• Small gate charge: Qg =37 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 3.5 m (typ.)• High forward transfer admittance: |Yfs| =80 S (typ.)• Low leakage current: IDSS = 10 A ...
TPCA8004-H: Features: • Small footprint due to small and thin package• High speed switching• Small gate charge: Qg =37 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 3.5 m (typ.)&...
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Features: • Small footprint due to small and thin package• High speed switching•...
Characteristics |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDSS |
30 |
V | |
Drain-gate voltage (RGS = 20 k) |
VDGR |
30 |
V | |
Gate-source voltage |
VGSS |
±20 |
V | |
Drain current |
DC (Note 1) |
ID |
40 |
A |
Pulsed (Note 1) |
IDP |
120 | ||
Drain power dissipation (Tc=25) |
PD |
45 |
W | |
Drain power dissipation (t = 10 s) |
PD |
2.8 |
W | |
Drain power dissipation (t = 10 s) |
PD |
1.6 |
W | |
Single pulse avalanche energy |
EAS |
208 |
mJ | |
Avalanche current |
IAR |
40 |
A | |
Repetitive avalanche energy |
EAR |
4.5 |
mJ | |
Channel temperature |
Tch |
150 |
||
Storage temperature range |
Tstg |
−55 to 150 |
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.