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TPCA8103

Features: • Small footprint due to small and thin package• Low drain-source ON resistance: R DS (ON) = 3.1 m (typ.)• High forward transfer admittance: |Yfs| =45S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = −30 V)• Enhancement mode: Vth = −...

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TPCA8103: Features: • Small footprint due to small and thin package• Low drain-source ON resistance: R DS (ON) = 3.1 m (typ.)• High forward transfer admittance: |Yfs| =45S (typ.)• Low ...

TPCA8103 Data Sheet

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Part Number:
TPCA8103
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Small footprint due to small and thin package
• Low drain-source ON resistance: R DS (ON) = 3.1 m (typ.)
• High forward transfer admittance: |Yfs| =45S (typ.)
• Low leakage current: IDSS = −10 A (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−30
V
Drain-gate voltage (RGS = 20 k)
VDGR
-30
V
Gate-source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
−40
A
Pulse (Note 1)
IDP
-120
Drain power dissipation (Tc=25°C)
PD
45
W
 
Drain power dissipation

 (t = 10 s)
(Note 2a)

 

PD

 2.8

 W

Drain power dissipation (t = 10 s)
(Note 2a)
PD
1.6
W
Single pulse avalanche energy (Note3)
EAS
208
mJ
Avalanche current
IAR
-40
A
Repetitive avalanche energy
(Note 4)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.




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