TPCA8010-H(TE12L,Q

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Gate Charge (Qg) @ Vgs: 10nC @ 10V
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25° C: 5.5A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Vgs(th) (Max) @ Id: 4V @ 1mA
Power - Max: 45W
Manufacturer: Toshiba
Supplier Device Package: 8-SOP Advance
Input Capacitance (Ciss) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.7A, 10V


Parameters:

Technical/Catalog Information	TPCA8010-H(TE12L,Q
Vendor	Toshiba (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	450 mOhm @ 2.7A, 10V
Input Capacitance (Ciss) @ Vds	600pF @ 10V
Power - Max	45W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	8-SOPA
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPCA8010 H TE12L,Q TPCA8010HTE12L,Q TPCA8010HTE12LQDKR ND TPCA8010HTE12LQDKRND TPCA8010HTE12LQDKR