MOSFET MOSFET N-Ch 200V 5.5A
TPCA8010-H(TE12LQM: MOSFET MOSFET N-Ch 200V 5.5A
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Features: • Small footprint due to small and thin package• High speed switching•...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 5.5 A |
Resistance Drain-Source RDS (on) : | 0.38 Ohms | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOP-8-ADV |
Packaging : | Reel |
Technical/Catalog Information | TPCA8010-H(TE12LQM |
Vendor | Toshiba |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 5.5A |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 2.7A, 10V |
Input Capacitance (Ciss) @ Vds | 600pF @ 10V |
Power - Max | 45W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 10nC @ 10V |
Package / Case | 2-5Q1A |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TPCA8010 H TE12LQM TPCA8010HTE12LQM |