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TPCA8006-H

Application` Small footprint due to small and thin package` High speed switching` Low drain-source ON resistance : RDS (ON) = 41 mO (typ.) (VG=10V, ID=9A)` High forward transfer admittance: |Yfs| = 15 S (typ.)` Low leakage current: IDSS = 100 A (max) (VDS = 100 V)` Enhancement mode: V th = 3.0 to ...

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TPCA8006-H: Application` Small footprint due to small and thin package` High speed switching` Low drain-source ON resistance : RDS (ON) = 41 mO (typ.) (VG=10V, ID=9A)` High forward transfer admittance: |Yfs| = ...

TPCA8006-H Data Sheet

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Part Number:
TPCA8006-H
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Application

`  Small footprint due to small and thin package
`  High speed switching
`  Low drain-source ON resistance
                                 : RDS (ON) = 41 mO (typ.) (VG=10V, ID=9A)
`  High forward transfer admittance: |Yfs| = 15 S (typ.)
`  Low leakage current: IDSS = 100 A (max) (VDS = 100 V)
`  Enhancement mode: V th = 3.0 to 5.0 V (V DS = 10 V, ID = 1 mA)


Specifications

Characteristics

 Symbol Rating Unit
Drain-source voltage VDSS 100 V
Drain-gate voltage (RGS = 20 k) VDGR 100 V
Gate-source voltage VGSS ±20 V
Drain current DC (Note 1) ID 18 A
Pulsed (Note 1) IDP 36
Drain power dissipation (Tc=25)
 PD 45 W
Drain power dissipation (t = 10 s)
(Note 2a)
 PD 2.8 W
Drain power dissipation (t = 10 s)
(Note 2b)		 PD 1.6 W
Single pulse avalanche energy
(Note 3)		 EAS 224 mJ
Avalanche current IAR 18 A
Repetitive avalanche energy
(Note 2a) (Note 4)		 EAR 4.5 mJ
Channel temperature Tch 150
Storage temperature range Tstg -55 to 150
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.


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