TPCA8005-H

Features: • Small footprint due to small and thin package• High speed switching• Small gate charge: Qg = 24 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 6.8 m (typ.)• High forward transfer admittance: |Yfs| = 46S (typ.)• Low leakage current: IDSS = 10 A...

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SeekIC No. : 004526184 Detail

TPCA8005-H: Features: • Small footprint due to small and thin package• High speed switching• Small gate charge: Qg = 24 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 6.8 m (typ.)...

floor Price/Ceiling Price

Part Number:
TPCA8005-H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/26

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Product Details

Description



Features:

• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg = 24 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 6.8 m (typ.)
• High forward transfer admittance: |Yfs| = 46S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)



Pinout

  Connection Diagram


Specifications

Characteristics
Symbol
Ratingt
Uni
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
30
A
Pulsed (Note 1)
IDP
90
Drain power dissipation (Tc=25)
PD
45
W
Drain power dissipation (t = 10 s)
                                      (Note 2a)
PD
2.8
W
Drain power dissipation (t = 10 s)
                                      (Note 2b)
PD
1.6
W
Single pulse avalanche energy
                                        (Note 3)
EAS
117
mJ
Avalanche current
IAR
30
A
Repetitive avalanche energy
(Tc=25)                         (Note 4)
EAR
4.5
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55 to 150
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page.
          This transistor is an electrostatic sensitive device. Please handle with caution.



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