TPCA8005-H

Features: • Small footprint due to small and thin package• High speed switching• Small gate charge: Qg = 24 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 6.8 m (typ.)• High forward transfer admittance: |Yfs| = 46S (typ.)• Low leakage current: IDSS = 10 A...

product image

TPCA8005-H Picture
SeekIC No. : 004526184 Detail

TPCA8005-H: Features: • Small footprint due to small and thin package• High speed switching• Small gate charge: Qg = 24 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 6.8 m (typ.)...

floor Price/Ceiling Price

Part Number:
TPCA8005-H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg = 24 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 6.8 m (typ.)
• High forward transfer admittance: |Yfs| = 46S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)



Pinout

  Connection Diagram


Specifications

Characteristics
Symbol
Ratingt
Uni
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
30
A
Pulsed (Note 1)
IDP
90
Drain power dissipation (Tc=25)
PD
45
W
Drain power dissipation (t = 10 s)
                                      (Note 2a)
PD
2.8
W
Drain power dissipation (t = 10 s)
                                      (Note 2b)
PD
1.6
W
Single pulse avalanche energy
                                        (Note 3)
EAS
117
mJ
Avalanche current
IAR
30
A
Repetitive avalanche energy
(Tc=25)                         (Note 4)
EAR
4.5
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55 to 150
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page.
          This transistor is an electrostatic sensitive device. Please handle with caution.



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Sensors, Transducers
Cables, Wires - Management
Inductors, Coils, Chokes
Discrete Semiconductor Products
Semiconductor Modules
View more