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TND312S

Features: • Dual buffer.• Monolithic structure (High voltage CMOS process adopted).• Withstand voltage of 25V is assured.• Wide range of operating voltage : 4.5V to 25V.• Peak outpout current : 2A.• Fast switching time (25ns typical at 1000pF load).• Fully...

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SeekIC No. : 004525432 Detail

TND312S: Features: • Dual buffer.• Monolithic structure (High voltage CMOS process adopted).• Withstand voltage of 25V is assured.• Wide range of operating voltage : 4.5V to 25V.̶...

TND312S Data Sheet

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Part Number:
TND312S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Dual buffer.
• Monolithic structure (High voltage CMOS process adopted).
• Withstand voltage of 25V is assured.
• Wide range of operating voltage : 4.5V to 25V.
• Peak outpout current : 2A.
• Fast switching time (25ns typical at 1000pF load).
• Fully compatible input to TTL / CMOS. (VIH=not more than 2.6V, at VDD=4.5 to 25V)
• Built-in input pull-down resistance.




Pinout






Specifications

Parameter Symbol Conditions Ratings Unit
Supply Voltage VDD 0 to 25 V
Input Voltage VIN GND--0.3 to VDD+0.3 V
Allowable Power Dissipation PD max 0.3 W
Junction Temperature Tj --55 to +150 °C
Storage Temperature Tstg --55 to +150 °C


Absolute maximum ratings
VDD max [V] 25
PD max [W] 0.3
Electrical characteristics
Operating voltage range [V] 4.5 to 25
Drive capability (source) [A] 2
Drive capability (sink) [A] 2
VIH min [V] 2.6
VIL max [V] 0.8





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