Features: • Dual buffer.• Monolithic structure(High voltage CMOS processadopted).• Withstand voltage of 25V is assured.• Wide range of operating voltage : 4.5V to 25V.• Peak outpout current : 2A.• Fast switching time(25ns typical at 1000pF load).• Fully co...
TND302S: Features: • Dual buffer.• Monolithic structure(High voltage CMOS processadopted).• Withstand voltage of 25V is assured.• Wide range of operating voltage : 4.5V to 25V.•...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Supply Voltage |
VDD |
0 to 25 |
V | |
Input Voltage |
VIN |
GND--0.3 to VDD+0.3 |
V | |
Allowable Power Dissipation |
PD max |
0.3 |
W | |
Junction Temperature |
Tj |
--55 to +150 |
°C | |
Storage Temperature |
Tstg |
--55 to +150 |
°C |
Absolute maximum ratings | |
---|---|
VDD max [V] | 25 |
PD max [W] | 0.3 |
Electrical characteristics | |
---|---|
Operating voltage range [V] | 4.5 to 25 |
Drive capability (source) [A] | 2 |
Drive capability (sink) [A] | 2 |
VIH min [V] | 2.6 |
VIL max [V] | 0.8 |