TN1506

These low threshold enhancement-mode (normally-off) transistors TN1506 utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these TN1506 are free from thermal runaway and thermally-induced secondary breakdown.

Supertex's vertical DMOS FETs TN1506 are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.