TN1504

Features: ·Low threshold - 2.0V max.·High input impedance·Low input capacitance - 50pF typical·Fast switching speeds·Low on resistance·Free from secondary breakdown·Low input and output leakage·Complementary N- and P-channel devicesApplication`Logic level interfaces ideal for TTL and CMOS`Solid s...

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SeekIC No. : 004525291 Detail

TN1504: Features: ·Low threshold - 2.0V max.·High input impedance·Low input capacitance - 50pF typical·Fast switching speeds·Low on resistance·Free from secondary breakdown·Low input and output leakage·Comp...

floor Price/Ceiling Price

Part Number:
TN1504
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

·Low threshold - 2.0V max.
·High input impedance
·Low input capacitance - 50pF typical
·Fast switching speeds
·Low on resistance
·Free from secondary breakdown
·Low input and output leakage
·Complementary N- and P-channel devices



Application

`Logic level interfaces ideal for TTL and CMOS
`Solid state relays
`Battery operated systems
`Photo voltaic drives
`Analog switches
`General purpose line drivers
`Telecom switches



Specifications

Parameter Value
Drain-to-source voltage BVDSS
Drain-to-source voltage BVDGS
Drain-to-source voltage ±20V
Operating and storage temperature -55to +150

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.  Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.


Description

These low threshold enhancement-mode (normally-off) transistors TN1504 utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors, and with the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, these TN1504 are free from thermal runaway and thermally -induced secondary breakdown.
 
Supertex's vertical DMOS FETs TN1504 are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.




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