TN0201T-T1

The TN0201T-T1 is designed as one kind of N-channel enhancement-mode MOSFET which can be used in direct logic-level interfact:TTL/CMOS;dirvers: relays, solenoids,lamps,hammers;battery operated systems,DC/DC converters;solid-state relays and load/Power switching-cell phones,pagers.

Features of the TN0201T-T1 are:(1)low on-resistance:0.75;(2)low threshold:<1.75 V(typ);(3)2.5-V or lower operation;(4)fast switching speed:15 ns;(5)low input and output leakage.Benefits can be summarized as low offset voltage,low-voltage operation,high-speed circuits and low error voltage,low battery voltage operation.

Also the absolute maximum ratings(TA=25 unless otherwise noted) of the TN0201T-T1 can be summarized:(1)drain-source voltage:20 V;(2)gate-source voltage:+/-20 V;(3)continuous drain current(Tj=150):0.3(TA=25);(4)continuous drain current(Tj=150):0.24(TA=70);(5)pulsed drain current:0.75 A;(6)continuous source current(diode conduction):1.0 A;(7)power dissipation(TA=25):0.2 W;(8)power dissipation(TA=70):0.128 W;(9)operating junction and storage temperature range:55 to 150.