TMS46100P Selling Leads, Price trend, TMS46100P DataSheet download, circuit diagram from SeekIC.com

Features: ` Organization . . . 4194304 * 1` Single 5 V Power Supply, for TMS44100/P (±10% Tolerance)` Single 3.3 V Power Supply, for TMS46100/P (±10% Tolerance)` Low Power Dissipation (TMS46100P only) 200-mA CMOS Standby 200-mA Self Refresh 300-mA Extended-Refresh Battery Backup` Performance Ra...

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SeekIC No. : 004525131 Detail

TMS46100P: Features: ` Organization . . . 4194304 * 1` Single 5 V Power Supply, for TMS44100/P (±10% Tolerance)` Single 3.3 V Power Supply, for TMS46100/P (±10% Tolerance)` Low Power Dissipation (TMS46100P onl...

TMS46100P Data Sheet

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Part Number:: TMS46100P
Supply Ability:: 5000

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Product Details

Description

Features:

` Organization . . . 4194304 * 1
` Single 5 V Power Supply, for TMS44100/P (±10% Tolerance)
` Single 3.3 V Power Supply, for TMS46100/P (±10% Tolerance)
` Low Power Dissipation (TMS46100P only)
   200-mA CMOS Standby
   200-mA Self Refresh
   300-mA Extended-Refresh Battery Backup
` Performance Ranges:
                  ACCESS ACCESS ACCESS READ
                        TIME TIME TIME OR WRITE
                        (tRAC) (tCAC) (tAA) CYCLE
                       (MAX) (MAX) (MAX) (MIN)
   '4x100/P-60 60 ns 15 ns 30 ns 110 ns
   '4x100/P-70 70 ns 18 ns 35 ns 130 ns
   '4x100/P-80 80 ns 20 ns 40 ns 150 ns
` Enhanced Page-Mode Operation for Faster Memory Access
` CAS-Before-RAS (CBR) Refresh
` Long Refresh Period
   1024-Cycle Refresh in 16 ms
   128 ms (Max) for Low-Power, Self-Refresh Version (TMS4x100P)
` 3-State Unlatched Output
` Texas Instruments EPICE CMOS Process
` Operating Free-Air Temperature Range 0 to 70

Pinout

Connection Diagram

Specifications

Supply voltage range, V_CC: TMS44100, TMS44100P . . . . . . . . . . . . . . 1 V to 7 V
TMS46100, TMS46100P . . . . . . . . . . . . . . . . . . . . . . ...................... 0.5 V to 4.6 V
Voltage range on any pin (see Note 1): TMS44100, TMS44100P . . . . 1 V to 7 V
TMS46100, TMS46100P . . . . . . . . . . . . . . . . . . . . . ........................ 0.5 V to 4.6 V
Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .1 W
Operating free-air temperature range, T_A . . . . . . . . . . . . . . . . . . . . . . . .0 to 70
Storage temperature range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150

‡ Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to V_SS.

Description

The TMS4x100 series are high-speed, 4194304-bit dynamic random-access memories, organized as 4194304 words of one bit each. The TMS4x100P series are high-speed, low-power, self-refresh with extended-refresh, 4194304-bit dynamic random-access memories, organized as 4194304 words of one bit each. Both TMS4x100 and TMS4x100P series employ state-of-the-art EPICE (Enhanced Performance Implanted CMOS) technology for high performance, reliability, and low voltage.

These TMS4x100 and TMS4x100P devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The TMS4x100 and TMS4x100P are offered in a 20-/26-lead plastic surface-mount small-outline (TSOP) package (DGA suffix) and a 300-mil 20- /26-lead plastic surface-mount SOJ package (DJ suffix). Both packages are characterized for operation from 0 to 70.

TMS46100P

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