TMS416100

• Organization . . . 16 777 216 * 1
• Single 5-V Power Supply (±10% Tolerance)
• Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE tRAC tCAC tAA CYCLE  (MAX) (MAX) (MAX) (MIN) '416100-60 60 ns 15 ns 30 ns 110 ns '416100-70 70 ns 18 ns 35 ns 130 ns '416100-80 80 ns 20 ns 40 ns 150 ns
• Enhanced Page Mode Operation for Faster Memory Access
• CAS-Before-RAS Refresh
• Long Refresh Period 4096 Cycle Refresh in 64 ms (TMS416100) 256 ms for Extended Refresh Version (TMS416100P)
• 3-State Unlatched Output
• Low Power Dissipation (TMS416100P Only) 500-mA CMOS Standby Current 500-mA Self-Refresh Current 500-mA Extended Refresh Battery Backup Current
• All Inputs, Outputs and Clocks Are TTL Compatible
• Operating Free-Air Temperature Range: 0°C to 70°C

Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V
Input voltage range (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V
Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to 125°C


† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values in this data sheet are with respect to VSS.

The TMS416100/P series are high-speed, 16777216-bit dynamic random-access memories, organized as 16777216 words of one bit each. The TMS416100P series feature self refresh and extended refresh. They employ state-of-the-art EPICE (Enhanced Performance Implanted CMOS) technology for high performance, reliability, and low power at a low cost.

These TMS416100 feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All inputs, outputs, and clocks are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The TMS416100/P are offered in 300-mil 24/26-lead plastic surface-mount SOJ packages (DJ suffix) and 24/26-lead plastic small-outline packages (DGA suffix). All packages are characterized for operation from 0°C to 70°C.