TMS45160

`Organization . . . 262144 * 16
`5-V Supply (±10% Tolerance)
`Performance Ranges: ACCESS ACCESS ACCESS READ OR TIME TIME TIME WRITE tRAC tCAC tAA CYCLE MAX MAX MAX MIN '45160/P-60 60 ns 15 ns 30 ns 110 ns '45160/P-70 70 ns 20 ns 35 ns 130 ns '45160/P-80 80 ns 20 ns 40 ns 150 ns
` Enhanced-Page-Mode Operation With xCAS-Before-RAS (xCBR) Refresh
` Long Refresh Period 512-Cycle Refresh in 8 ms (Max) 64 ms Max for Low Power With Self-Refresh Version (TMS45160P)
` 3-State Unlatched Output
` Low Power Dissipation
` Texas Instruments EPICE CMOS Process
` All Inputs, Outputs, and Clocks Are TTL Compatible
`High-Reliability, 40-Lead, 400-Mil-Wide Plastic Surface-Mount (SOJ) Package and 40/44-Lead Thin Small-Outline Package (TSOP)
` Operating Free-Air Temperature Range 0°C to 70°C
` Low Power With Self-Refresh Version
` Upper and Lower Byte Control During Read and Write Operations

Supply voltage range, V_CC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V
Voltage range on any pin (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V
Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
Operating free-air temperature range, T_A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to 150°C


† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values are with respect to V_SS.

The TMS45160 series are high-speed, 4194304-bit dynamic random-access memories organized as 262144 words of 16 bits each. The TMS45160P series are high-speed, low-power, self-refresh 4194304-bit dynamic random-access memories organized as 262144 words of 16 bits each. They employ state-of-the-art EPICE (Enhanced Performance Implanted CMOS) technology for high performance, reliability, and low power at low cost.

These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. Maximum power dissipation is as low as 770 mW operating and 11 mW standby on 80-ns devices. All inputs and outputs, including clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The TMS45160 and TMS45160P are each offered in a 40-lead plastic surface-mount SOJ package (DZ suffix) and a 40/44-lead plastic surface-mount small-outline (TSOP) package (DGE suffix). These packages are characterized for operation from 0°C to 70°C.