Features: ` Organization . . . 1048576 * 4` Single 5-V Power Supply (±10% Tolerance)` Performance Ranges: ACCESS ACCESS ACCE+SS EDO TIME TIME TIME CYCLE (tRAC) (tCAC) (tAA) (tHPC) (MAX) (MAX) (MAX) (MIN) '44409/P-60 60 ns 15 ns 30 ns 25 ns '44409/P-70 70 ns 18 ns 35 ns 30 ns '44409/P-80 80 ns 20 n...
TMS44409P: Features: ` Organization . . . 1048576 * 4` Single 5-V Power Supply (±10% Tolerance)` Performance Ranges: ACCESS ACCESS ACCE+SS EDO TIME TIME TIME CYCLE (tRAC) (tCAC) (tAA) (tHPC) (MAX) (MAX) (MAX) ...
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Features: • Organization . . . 16 777 216 * 1• Single 5-V Power Supply (±10% Tolerance...
The TMS44409/P is a high-speed 4194304-bit dynamic random-access memory (DRAM) organized as 1048576 words of four bits each. This TMS44409/P device features maximum RAS access times of 60 ns, 70 ns and 80 ns. Maximum power consumption is as low as 385 mW operating and 6 mW standby. All inputs and outputs, including clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS44409P is a high-speed, low-power, self-refresh version of the TMS44409 DRAM.
All versions of the TMS44409/P are offered in a 300-mil 20/26 J-lead plastic surface-mount SOJ package (DJ suffix) and a 20/26-lead plastic small outline package (DGA suffix). These devices are characterized for operation from 0°C to 70°C.