Features: ` Organization . . . 1048576 * 4
` Single 5-V Power Supply for TMS44400/P (±10% Tolerance)
` Single 3.3-V Power Supply for TMS46400/P (±10% Tolerance)
` Low Power Dissipation (TMS46400P only)
200-A CMOS Standby
200-A Self Refresh
300-A Extended-Refresh Battery Backup
` Performance Ranges:
ACCESS ACCESS ACCESS READ
TIME TIME TIME OR WRITE
(tRAC) (tCAC) (tAA) CYCLE
(MAX) (MAX) (MAX) (MIN)
'4x400/P-60 60 ns 15 ns 30 ns 110 ns
'4x400/P-70 70 ns 18 ns 35 ns 130 ns
'4x400/P-80 80 ns 20 ns 40 ns 150 ns
` Enhanced Page-Mode Operation for Faster Memory Access
` CAS-Before-RAS(CBR) Refresh
`Long Refresh Period 1024-Cycle Refresh in 16 ms 128 ms (MAX) for Low-Power, Self-Refresh Version (TMS4x400P)
` 3-State Unlatched Output
` Texas Instruments EPICE CMOS ProcessPinout
SpecificationsSupply voltage range, VCC: TMS44400, TMS44400P ......... 1.0 V to 7.0 V
TMS46400, TMS46400P ........ 0.5 V to 4.6 V
Voltage range on any pin (see Note 1) TMS44400, TMS44400P........ 1.0 V to 7.0 V
TMS46400, TMS46400P ......... 0.5 V to 4.6 V
Short-circuit output current................................................................................ 50 mA
Power dissipation...................................................................................................1 W
Operating free-air temperature range,TA .....................................................0to 70
Storage temperature range, Tstg ..........................................................55 to 150
‡ Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to VSS.
DescriptionThe TMS44400 series is a set of high-speed, 4194304-bit dynamic random-access memories (DRAMs), organized as 1048576 words of four bits each. The TMS4x400P series is a set of high-speed, low-power, self-refresh with
extended-refresh, 4194304-bit DRAMs, organized as 1048576 words of four bits each. Both series employ state-of-the-art enhanced performance implanted CMOS (EPICETM) technology for high performance, reliability, and low power.
These TMS44400 feature maximum RASaccess times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility.
The TMS44400 and TMS4x400P are offered in a 20 / 26-lead plastic small-outline (TSOP) package (DGA suffix) and a 300-mil 20/26-lead plastic surface-mount SOJ package (DJ suffix). Both packages are characterized for operation from 0to 70.
TMS44400 Data Sheet
