TMS4416

The TMS4416 is designed as a high-speed 65,536-bit dynamic, random access memory, organized as 16,384 words of 4 bits each. It employs state-of-the-art SMOS (scaled MOS) N-channel double-level polysilicon gate technology for vaey high performance combined with low cost and improved reliability.

TMS4416 has ten features. (1)16,384x4 organization. (2)Single +5V supply (10% tolerance). (3)Its long refresh period 4 milliseconds. (4)Low refresh overhead time as low as 1.7% of total refresh perlod. (5)All inputs, outputs, clocks fully TTL compatible. (6)3-state unlatched outputs. (7)Early write or /G control output buffer impedance. (8)Page-mode operation for faster access. (9)Low power dissipation would be 200mW typ for operation and 17.5mW typ for standby. (10)New SMOS scaled MOS N-channel technology. Those are all the main features.

Some absolute maximum ratings of TMS4416 have been concluded into several points as follow. (1)Its voltage on any pin except Vdd and data out would be from -1.5V to 10V. (2)Its voltage on Vdd supply and data out with respect to Vss would be from -1V to 6V. (3)Its short circuit output current would be 50mA. (4)Its power dissipation would be 1W. (5)Its operating free-air temperature range would be from 0°C to 70°C. (6)Its operating case temperature range would be from -55°C to 100°C for S version and would be from -40°C to 85°C for E version. (7)Its storage temperature range would be from -65°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of TMS4416 are concluded as follow. (1)Its input clamp voltage would be max -1.2V. (2)Its high level output voltage would be min 2.4V. (3)Its low level output voltage would be max 0.4V. (4)Its input current leakage would be max +/-10uA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!