TMS428169A

` Organization . . . 1048576 by 16 Bits
` Single 5-V Power Supply for TMS418169A (± 10% Tolerance)
` Single 3.3-V Power Supply for TMS428169A (± 0.3 V Tolerance)
` 1024-Cycle Refresh in 16 ms
` Performance Ranges: ACCESS ACCESS ACCESS READ OR TIME TIME TIME EDO tRAC tCAC tAA CYCLE MAX MAX MAX MIN '418169A-50 50 ns 13 ns 25 ns 20 ns '418169A-60 60 ns 15 ns 30 ns 25 ns '418169A-70 70 ns 18 ns 35 ns 30 ns '428169A-60 60 ns 15 ns 30 ns 25 ns '428169A-70 70 ns 18 ns 35 ns 30 ns
` Extended-Data-Out (EDO) Operation
` xCAS-Before-RAS (xCBR) Refresh
` 3-State Unlatched Output
` Low Power Dissipation
` High-Reliability Plastic 42-Lead 400-Mil-Wide Surface-Mount Small-Outline J-Lead (SOJ) Package (DZ Suffix) and 44/50-Lead Surface-Mount Thin Small-Outline Package (TSOP) (DGE Suffix)
` Ambient Temperature Range 0°C to 70°C

Supply voltage range, VCC: TMS418169A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V
TMS428169A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to 4.6 V
Voltage range on any pin (see Note 1): TMS418169A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V
TMS428169A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to 4.6 V
Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
Ambient temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to 125°C


† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values are with respect to VSS.

The TMS418169A and TMS428169A are 16777216-bit dynamic random-access memory (DRAM) devices organized as 1048576 words of 16 bits each. They employ state-of-the-art technology for high performance, reliability, and low power at low cost.

The TMS418169A features maximum RAS access times of 50-, 60-, and 70 ns, and the TMS428169A features maximum RAS access times of 60- and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The TMS418169A is offered in a 42-lead plastic surface-mount SOJ package (DZ suffix). The TMS428169A is offered in a 44/50-lead plastic surface-mount TSOP (DGE suffix). These packages are designed for operation from 0°C to 70°C.