TMS418169

` Organization . . . 1048576 Words by 16 Bits
` Single 5-V Power Supply
` Performance Ranges: ACCESS ACCESS ACCESS READ OR TIME TIME TIME EDO tRAC tCAC tAA CYCLE MAX MAX MAX MIN '41x169/P-60 60 ns 15 ns 30 ns 25 ns '41x169/P-70 70 ns 18 ns 35 ns 30 ns '41x169/P-80 80 ns 20 ns 40 ns 35 ns
` Extended-Data-Out (EDO) Operation
` xCAS-Before-RAS (xCBR) Refresh
` RAS-Only Refresh 1024-Cycle Refresh in 16 ms (TMS418169) 4096-Cycle Refresh in 64 ms (TMS416169)
` 3-State Unlatched Output
` High-Reliability Plastic 42-Lead (DZ Suffix) 400-Mil-Wide Surface-Mount (SOJ) Package
` Operating Free-Air Temperature Range 0°C to 70°C
` Texas Instruments Enhanced Performance Implanted CMOS (EPICE) Process

Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V
Voltage range on any pin (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V
Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to 125°C


† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values are with respect to VSS.

The TMS418169 and the TMS416169 are high-speed, 16777216-bit dynamic random-access memories (DRAMs) organized as 1048576 words of 16 bits each. Both devices employ state-of-the-art EPIC technology for high performance, reliability, and low power at low cost.

These TMS418169 feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The TMS416169 and TMS418169 are offered in a 42-lead plastic surface-mount SOJ (DZ suffix) package. The package is characterized for operation from 0°C to 70°C.