TMS29F002T

` Single Power Supply Supports 5-V
10% Read/Write Operation
` Organization: . . . 262144 By 8 Bits
` Array-Blocking Architecture One 16K-Byte Protected-Boot Sector Two 8K-Byte Parameter-Sectors One 32K-Byte Sector Three 64K-Byte Sectors Any Combination of Sectors Can Be Erased. Supports Full-Chip Erase Any Combination of Sectors Can Be Marked as Read-Only
` Boot-Code Sector Architecture T = Top Sector B = Bottom Sector
` Sector Protection Hardware Protection Method That Disables Any Combination of Sectors From Write or Erase Operations Using Standard Programming Equipment
` Embedded Program/Erase Algorithms Automatically Pre-Programs and Erases Any Sector Automatically Programs and Verifies the Program Data at Specified Address
` JEDEC Standards Compatible With JEDEC Byte Pinouts Compatible With JEDEC EEPROM Command Set
` Fully Automated On-Chip Erase and Program Operations
` 100 000 Program/Erase Cycles
` Low Power Dissipation
` Low Current Consumption 40-mA Typical Active Read 60-mA Typical Program/Erase Current Less Than 100-mA Standby Current
` All Inputs/Outputs TTL-Compatible
` Erase Suspend/Resume Supports Reading Data From, or Programming Data to, a Sector Not Being Erased
` 40-Pin Thin Small Outline Package (TSOP) (DCD Suffix)
` Detection Of Program/Erase Operation Data Polling and Toggle Bit Feature of Program/Erase Cycle Completion
` High-Speed Data Access at 5-V VCC-10% 70 Commercial . . . 0°C to 70°C 80 Extended . . . 40°C to 85°C

Supply voltage range, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 7 V
Input voltage range VI: All inputs except A9, CE, OE (see Note 2) . . . . . . . . . . . . . . . . . 0.6 V to VCC + 1 V
A9, CE, OE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 13.5 V
Output voltage range VO (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to VCC + 1 V
Operating free-air temperature range during read/erase/program, TA
(L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
(E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C


† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES:
1. All voltage values are with respect to VSS.
2. The voltage on any input or output can undershoot to 2 V for periods of less than 20 ns. See Figure 2.
3. The voltage on any input or output can overshoot to VCC + 2 V for periods of less than 20 ns. See Figure 3.

The TMS29F002T/B is a 262144 by 8-bit (2097152-bit), 5-V single-supply, programmable read-only memory device that can be electrically erased and reprogrammed. This device is organized as 262144 x 8 bits, divided into seven sectors:
One 16K-byte protected-boot sector
Two 8K-byte sectors
One 32K-byte sector
Three 64K-byte sectors
Any combination of sectors can be marked as read-only or erased. Full chip erasure is also supported. Sector data protection is afforded by methods that can disable any combination of sectors from write or read operations using standard programming equipment. An on-chip state machine provides an on-board algorithm that automatically pre-programs and erases any sector before it automatically programs and verifies program data at any specified address.