TMS28F400BZT

Supply voltage range, V_CC (see Note 2)   . . . . . . . . . .  . 0.6 V to 7 V
Supply voltage range, V_PP (see Note 2)  . . . . . . . . .  . . 0.6 V to 14 V
Input voltage range: All inputs except A9, RP . . .  0.6 V to V_CC + 1 V 
                                          RP, A9 (see Note 3)   . . . . 0.6 V to 13.5 V
Output voltage range (see Note 4)  . . . . . . . . . .   0.6 V to V_CC + 1 V 
Operating free-air temperature range, T_A, during read/erase/program:
                                                      L suffix  . . . . . . . . . . .  0°C to 70°C  
                                                      E suffix   . . . . . . . . 40°C to 85°C
Storage temperature range, T_stg  . . . . . . . . . . . . . .  65°C to 150°C

    The TMS28F400BZT  is a 524288 by 8-bit /262144 by 16-bit (4194304-bit), boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F400BZT  is organized in a blocked architecture consisting of one 16K-byte protected boot block, two 8K-byte parameter blocks, one 96K-byte main block, and three 128K-byte main blocks. The device can be ordered with either a top or bottom boot-block configuration. Operation as a 512K byte (8-bit) or a 256K-word (16-bit) organization is user-definable.

    Embedded program and block-erase functions are fully automated by an on-chip write state machine (WSM), simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status can be monitored by the on-chip status register to determine progress of program/erase tasks. The device features user selectable block erasure.

    The TMS28F400BZT  flash memory is offered in a 44-pin PSOP. It is available in two temperature ranges: 0 to 70 and -40 to 85.