TMS28F200BZT

` Organization . . . 262144 by 8 bits 131072 by 16 bits
` Array-Blocking Architecture Two 8K-Byte Parameter Blocks One 96K-Byte Main Block One 128K-Byte Main Block  One 16K-Byte Protected Boot Block Top or Bottom Boot Locations
` All Inputs/Outputs TTL Compatible
` Maximum Access/Minimum Cycle Time V_CC ± 10% '28F200BZx70 70 ns '28F200BZx80 80 ns '28F200BZx90 90 ns (x = top (T) or bottom (B) boot-block configurations ordered)
` 10000 Program/Erase-Cycles
` Three Temperature Ranges Commercial . . . 0°C to 70°C Extended . . . 40°C to 85°C Automotive . . . 40°C to 125°C
` Low Power Dissipation (VCC = 5.5 V) Active Write . . . 330 mW (Byte-Write) Active Read . . . 330 mW (Byte-Read) Active Write . . . 358 mW (Word-Write) Active Read . . . 330 mW (Word-Read) Block-Erase . . . 165 mW Standby . . . 0.55 mW (CMOS-Input Levels) Deep Power-Down Mode . . . 0.0066 mW
` Fully Automated On-Chip Erase and Word/Byte-Program Operations
` Write-Protection for Boot Block
` Industry-Standard Command State Machine (CSM) Erase-Suspend/Resume Algorithm-Selection Identifier

Supply voltage range, VCC (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 7 V
Supply voltage range, VPP (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 14 V
Input voltage range: All inputs except A9, RP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to V_CC + 1 V
RP, A9 (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 13.5 V
Output voltage range (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to V_CC + 1 V
Operating free-air temperature range, TA, during read/erase/program: L suffix . . . . . . . . . . . . . . 0°C to 70°C
E suffix . . . . . . . . . . . . 40°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C


† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES:
2. All voltage values are with respect to VSS.
3. The voltage on any input can undershoot to 2 V for periods less than 20 ns.
4. The voltage on any output can overshoot to 7 V for periods less than 20 ns.

The TMS28F200BZT is a 262144 by 8-bit/131072 by 16-bit (2097152-bit), boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F200BZx is organized in a blocked architecture consisting of one 16K-byte protected boot block, two 8K-byte parameter blocks, one 96K-byte main block, and one 128K-byte main block. The device can be ordered with either a top or bottom boot-block configuration. Operation as a 256K-by 8-bit or a 128K-by16-bit organization is user-definable.