Features: `Auto-Select VCC and VPP Voltages 2.7 V, 3.3 V, or 5 V Read Operation (VCC) 2.7 V, 3.3 V, 5 V, or 12 V Program Erase (VPP)
`Fast Read Access Time 5 V: 80/90 ns MAX 2.7 V, 3.3 V: 90/100 ns MAX
`Low Power Consumption (VCC = 5.5V) Active Write 220 mW (Byte Mode)† Active Read 248 mW (Byte Mode)† Active Write 220 mW (Word Mode)† Active Read 248 mW (Word Mode)† Block-Erase 220 mW† Standby 0.55 mW Deep Power-Down Mode 0.044 mW
` Automatic Power-Saving Mode
` Sector Architecture One 16K-Byte Protected Boot Block Two 8K-Byte Parameter Blocks One 96K-Byte Main Block Fifteen 128K-Byte Main Blocks Top or Bottom Boot Locations
` User-Selectable x8 or x16 Operation
` Fully Automated On-Chip Erase and Byte/Word Program Operations
` All Inputs/Outputs TTL-Compatible
` Supports Concurrent Operations Read During Program Read During Erase Program During Erase Two-Byte/ -Word Programming Two Sector Combinations Erasure
` Enhanced Suspend Options Sector-Erase-Suspend to Read Sector-Erase-Suspend to Program Program-Suspend to Read
` Command Set Compatible With Previous Generation of Flash
` Transition Between Single-Operation and Concurrent-Operations Mode by way of Software Command
` 100000 Program/Erase Cycles Per Sector
` Hardware Write-Protection for Boot Block Two Temperature Ranges
Commercial 0°C to 70° C Extended 40°C to 85° C
Industry Standard Packaging (JEDEC) 48-Pin TSOP (DCD Suffix)Pinout
SpecificationsSupply voltage range, VCC (see Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 7 V
Supply voltage range, VPP (see Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 14 V
Input voltage range: All inputs except A9, RP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to VCC + 1 V
RP, A9 (see Note 7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 13.5 V
Output voltage range (see Note 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to VCC + 1 V
Operating free-air temperature range, TA, during read/erase/program: L suffix . . . . . . . . . . . . . . 0°C to 70°C
E suffix . . . . . . . . . . . . 40°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C
† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltage values are with respect to VSS.
2. The voltage on any input can undershoot to 2 V for periods less than 20 ns.
3. The voltage on any output can overshoot to 7 V for periods less than 20 ns.
The TMS28F1600 allows memory reads to be performed using VCC = 2.7 V to 3.6 V for optimum power consumption or VCC = 5 ± 10% for device performance. Erasing or programming the device can be accomplished with VPP = 2.7 V12 V for maximum flexibility.
DescriptionThe TMS28F1600T/B is a 16777216-bit, boot-block flash memory that can be electrically block-erased and eprogrammed. The TMS28F1600T/B is organized in a sectored architecture consisting of one 16K-byte protected boot sector, two 8K-byte parameter sectors, one 96K-byte main sector, and fifteen 128K-byte main sectors. Operation as a 2M-byte (8-bit) or a 1M-word (16-bit) organization is user-selectable.
Embedded program and block-erase functions are fully automated by two on-chip write state machines (WSMs), simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM tatuses can be monitored by two on-chip status registers, one for each WSM, to determine progress of program/erase tasks.
TMS28F1600B Data Sheet
