TMS28F010B

Features:

1.Organization . . . 131072 by 8 Bits

2.Pin Compatible With Existing 1-Megabit EPROMs

3.VCC Tolerance ±10%

4.All Inputs/Outputs TTL Compatible

5.Maximum Access/Minimum Cycle Time
 28F010B-9090 ns
 28F010B-10100 ns
 28F010B-12120 ns
 28F010B-15150 ns

6.PEP4 Version Available With 168-Hour Burn-In, and Choice of Operating
Temperature Ranges

7.100000 and 10000 Program/Erase-Cycle Versions Available

8.Latchup Immunity of 250 mA on All Input and Output Lines

9.Low Power Dissipation (VCC= 5.5 V)
Active Write...55 mW
Active Read...165 mW
Electrical Erase...82.5 mW
Standby...0.55 mW(CMOS-Input Levels)

10.Automotive Temperature Range 40°C to 125°C

 

Description

The TMS28F010B is a 131072 by 8 bit (1048576-bit), programmable read-only memory that can be electricallybulk-erased and reprogrammed. It is available in 100000 and 10000 program/erase-endurance-cycle versions.
The TMS28F010B Flash Memory is offered in a 32-lead plastic leaded chip-carrier package (shown above)using 1,25-mm (50-mil) lead spacing (FM suffix), a 32-lead thin small-outline package (DD suffix), and a reverse pinout TSOP package (DU suffix)both shown on the following page.