Features: ` Organization . . . 1048576 By 8 Bits 524288 By 16 Bits` Array-Blocking Architecture Two 8K-Byte/4K-Word Parameter Blocks One 96K-Byte/48K-Word Main Block Seven 128K-Byte/64K-Word Main Blocks One 16K-Byte/8K-Word Protected Boot Block Top or Bottom Boot Locations` All Inputs/Outputs...
TMS28F008Axy: Features: ` Organization . . . 1048576 By 8 Bits 524288 By 16 Bits` Array-Blocking Architecture Two 8K-Byte/4K-Word Parameter Blocks One 96K-Byte/48K-Word Main Block Seven 128K-Byte/64K-Word Main...
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DescriptionThe TMS2516-45JL is 16,384-bit,ultraviolet(UV) light erasable,electrically programmable...
` Organization . . . 1048576 By 8 Bits 524288 By 16 Bits
` Array-Blocking Architecture Two 8K-Byte/4K-Word Parameter Blocks One 96K-Byte/48K-Word Main Block Seven 128K-Byte/64K-Word Main Blocks One 16K-Byte/8K-Word Protected Boot Block Top or Bottom Boot Locations
` All Inputs/Outputs TTL-Compatible
` Maximum Access/Minimum Cycle Time 5-V VCC 3-V VCC '28F008Axy70 70 ns 100 ns '28F008Axy80 80 ns 120 ns '28F800Axy70 70 ns 100 ns '28F800Axy80 80 ns 120 ns (See Table 1 for VCC/VPP Voltage Configuration)
` 100000- and 10000-Program/Erase Cycle Versions
` Three Temperature Ranges Commercial . . . 0°C to 70°C Extended . . . 40°C to 85°C Automotive . . . 40°C to 125°C
` Embedded Program/Erase Algorithms Automated Byte Programming Automated Word Programming Automated Block Erase Erase Suspend/Erase Resume
` Automatic Power-Saving Mode
` JEDEC Standards Compatible Compatible With JEDEC Byte/Word Pinouts Compatible With JEDEC EEPROM Command Set
` Fully Automated On-Chip Erase and Byte/Word Program Operations
` Package Options 44-Pin Plastic Small-Outline Package (PSOP) (DBJ Suffix) 40-Pin Thin Small-Outline Package (TSOP) (DCD Suffix) 48-Pin TSOP (DCD Suffix) 48-Ball Micro Ball Grid Array (mBGA) available
` Low Power Dissipation (VCC = 5.5 V) Active Write . . . 330 mW (Byte Write) Active Read . . . 220 mW (Byte Read) Active Write . . . 330 mW (Word Write) Active Read . . . 275 mW (Word Read) Block Erase . . . 330 mW Standby . . . 0.55 mW (CMOS-Input Levels) Deep Power-Down Mode . . . 0.044 mW
` Write-Protection for Boot Block
` Industry Standard Command-State Machine (CSM) Erase Suspend/Resume Algorithm-Selection Identifier
` Flexible VPP/Supply Voltage Combination
Supply voltage range, VCC (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 7 V
Supply voltage range, VPP (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 14 V
Input voltage range: All inputs except A9,RP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to VCC + 1 V
RP, A9 (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 13.5 V
Output voltage range (see Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to VCC + 1 V
Ambient temperature range, TA, during read/erase/program: L suffix . . . . . . . . . . . . . . 0°C to 70°C
E suffix . . . . . . . . . . . . 40°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C
† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltage values are with respect to VSS.
2. The voltage on any input or output can undershoot to 2 V for periods of less than 20 ns. See Figure 7.
3. The voltage on any input or output can overshoot to 2 V for periods of less than 20 ns. See Figure 8.
The TMS28F008Axy is a type of 8388608-bit, boot-block flash memory that is able to be electrically block-erased and reprogrammed.The TMS28F800Axy is organized in a blocked architecture consisting of one 16K-byte/8K-word prot ected boot block, two 8K-byte/4K-word parameter blocks, one 96K-byte/48K-word main block, seven 128K-byte/64K-word main blocks.
Features of TMS28F008Axy are: (1)all inputs/outputs TTL-compatible; (2)100000-and 10000-program/erase cycle ver sions; (3)fully automated on-chip erase and byte/word program operations; (4)write-protection for boot block; (5)flexible VPP/supply voltage combination; (6)array-blocking architecture:two 8K-byte/4K-word parameter blocks, one 96K-byte/48K-word main block, seven 128K-byte/64K-word main blocks, one 16K-byte/8K-word protected boot block, top or bottom boot locations; (7)industry standard command-state machine(CSM): erase suspend/resume, algorithm-selection identifier.
The absolute maximum ratings of the TTMS28F008Axy can be summarized as: (1)supply voltage range: -0.6V to 7V; (2)supply voltage range: 0.6V to 14V; (3)input voltage range(all inputs except A9, RP): 0.6V to VCC+1 V; (4)out put voltage range:0.6V to VCC+1V; (5)ambient temperature range, TA, during read/erase/program(L suffix): 0°C to 70°C; (6)storage temperature range: 65°C to 150°C.