SpecificationsSupply voltage range, VCC (see Note 1) .............. 1 V to 7 V Voltage range on any pin (see Note 1)................ 1 V to 7 VShort-circuit output current ............................. 50 mAPower dissipation ......................................8 W Operating free-air temperature...
TM497FBK32S: SpecificationsSupply voltage range, VCC (see Note 1) .............. 1 V to 7 V Voltage range on any pin (see Note 1)................ 1 V to 7 VShort-circuit output current ............................
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SpecificationsSupply voltage range, VCC (see Note 1).............. 1 V to 7 V Voltage range on an...
Features: Organization TM497BBK32H/ I: 4194304 x 32 TM893CBK32H/ I: 8388608 x 32Single 5-V Power...
Features: Organization TM497BBK32H/ I: 4194304 x 32 TM893CBK32H/ I: 8388608 x 32Single 5-V Power...
The TM497FBK32S is a 16M-byte dynamic random-access memory (DRAM) organized as four times 4194304 × 8 bits in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is composed of eight TMS417409DJ, 4194304 × 4-bit DRAMs, each in 24/26-lead plastic small-outline J-lead (SOJ) packages mounted on a substrate with decoupling capacitors. The TMS417409DJ is described in the TMS416409, TMS417409 data sheet (literature number SMKS884).
The TM497FBK32S SIMM is available in the single-sided BK leadless module for use with sockets. The TM497FBK32 features RAS access times of 60 ns, 70 ns, and 80 ns. This device is characterized for operation from 0°C to 70°C.
The TM497FBK32S is a 32M-byte DRAM organized as four times 8388608 × 8 bits in a 72-pin leadless SIMM.The SIMM is composed of sixteen TMS417409DJ 4194304 × 4-bit DRAMs.
The TM893GBK32/S SIMM is available in the double-sided BK leadless module for use with sockets.The TM893GBK32/S features RAS access times of 60 ns, 70 ns, and 80 ns. This device is characterized for operation from 0°C to 70°C.