Features: Organization TM497BBK32H/ I: 4194304 x 32 TM893CBK32H/ I: 8388608 x 32Single 5-V Power Supply (±10% Tolerance)72-Pin Single In-Line Memory Module (SIMM) for Use With SocketTM497BBK32H/ I Uses Eight 16M-Bit Dynamic Random-Access Memories (DRAMs) in Plastic Small-Outline J-Lead (SOJ) Pa...
TM497BBK32H: Features: Organization TM497BBK32H/ I: 4194304 x 32 TM893CBK32H/ I: 8388608 x 32Single 5-V Power Supply (±10% Tolerance)72-Pin Single In-Line Memory Module (SIMM) for Use With SocketTM497BBK32H/ I...
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SpecificationsSupply voltage range, VCC (see Note 1).............. 1 V to 7 V Voltage range on an...
Features: Organization TM497BBK32H/ I: 4194304 x 32 TM893CBK32H/ I: 8388608 x 32Single 5-V Power...
SpecificationsSupply voltage range, VCC (see Note 1).............. 1 V to 7 V Voltage range on an...
The TM497BBK32H/I is a 16M-byte dynamic random-access memory (DRAM) device organized as 4 × 4194304 × 8 bits in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is composed of eight TMS417400ADJ, 4194304 × 4-bit DRAMs, each in 24/26-lead plastic small-outline J-lead (SOJ) packages mounted on a substrate with decoupling capacitors. The TMS417400ADJ is described in the TMS417400A data sheet (literature number SMKS889).
The TM497BBK32H/I SIMM is available in the single-sided BK leadless module for use with sockets. The TM497BBK32H/ I features RAS access times of 50, 60, and 70 ns. This device is characterized for operation from 0°C to 70°C.
The TM893CBK32H/ I is a 32M-byte DRAM organized as 4 8388608 × 8 bits in a 72-pin leadless SIMM. The SIMM is composed of sixteen TMS417400ADJ, 4194304 × 4-bit DRAMs.
The TM893CBK32H/ I SIMM is available in the double-sided BK leadless module for use with sockets. The TM893CBK32H/ I features RAS access times of 50, 60, and 70 ns. This device is characterized for operation from 0°C to 70°C.