Features: Organization TM497FBK32H/I: 4 194 304 x 32 TM893GBK32H/I: 8 388 608 x 32Single 5-V Power Supply (±10% Tolerance)72-Pin Single In-Line Memory Module (SIMM) for Use With SocketTM497FBK32H/I Uses Eight 16M-Bit Dynamic Random-Access Memories (DRAMs) in Plastic Small-Outline J-Lead (SOJ) P...
TM497FBK32I: Features: Organization TM497FBK32H/I: 4 194 304 x 32 TM893GBK32H/I: 8 388 608 x 32Single 5-V Power Supply (±10% Tolerance)72-Pin Single In-Line Memory Module (SIMM) for Use With SocketTM497FBK32H/...
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SpecificationsSupply voltage range, VCC (see Note 1).............. 1 V to 7 V Voltage range on an...
Features: Organization TM497BBK32H/ I: 4194304 x 32 TM893CBK32H/ I: 8388608 x 32Single 5-V Power...
Features: Organization TM497BBK32H/ I: 4194304 x 32 TM893CBK32H/ I: 8388608 x 32Single 5-V Power...
The TM497FBK32I is a 16M-byte dynamic random-access memory (DRAM) module organized as four times 4194304 × 8 bits in a 72-pin leadless single-in line memory module (SIMM). The SIMM is composed of eight TMS417409ADJ DRAMs, each in 24/26-lead plastic small-outline J-lead (SOJ) packages mounted on a substrate with decoupling capacitors. The TMS417409ADJ is described in the TMS416409A, TMS417409A data sheet (literature number SMKS893).
The TM497FBK32I SIMM is available in the single-sided BK leadless module for use with sockets. The TM497FBK32H/I features RAS access times of 50, 60, and 70 ns. This device is characterized for operation from 0°C to 70°C.
The TM497FBK32I is a 32M-byte DRAM organized as four times 8388608 × 8 bits in a 72-pin leadless SIMM. The SIMM is composed of sixteen TMS417409ADJ DRAMs.
The TM497FBK32I SIMM is available in the double-sided BK leadless module for use with sockets. The TM893GBK32H/I features RAS access times of 50, 60, and 70 ns. This device is characterized for operation from 0°C to 70°C.