TM4100GAD8

` Organization . . . 4194304 * 8
` Single 5-V Power Supply (±10% Tolerance)
` 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets
` Utilizes Eight 4-Megabit DRAMs in Plastic Small-Outline J-Lead Packages (SOJs)
` Long Refresh Period 16 ms (1024 Cycles)
` All Inputs, Outputs, Clocks Fully TTL Compatible
` 3-State Output
` Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR tRAC tAA tCAC WRITE CYCLE (MAX) (MAX) (MAX) (MIN) '4100GAD8-60 60 ns 30 ns 15 ns 110 ns '4100GAD8-70 70 ns 35 ns 18 ns 130 ns '4100GAD8-80 80 ns 40 ns 20 ns 150 ns
` Common CAS Control for Eight Common Data-In and Data-Out Lines
` Low Power Dissipation
` Operating Free-Air Temperature Range 0°C to 70°C

Supply voltage range on any pin (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V
Supply voltage range on VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V
Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 W
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to 125°C


† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

The TM4100GAD8 is a dynamic random-access memory (DRAM) module organized as 4194304 × 8 bits in a 30-pin leadless single in-line memory module (SIMM).

The SIMM is composed of eight TMS44100DJ 4194304 × 1-bit DRAMs in 20/26-lead plastic small-outline J-lead packages (SOJ) mounted on a substrate with decoupling capacitors. The TM4100GAD8 is available in the AD single-sided, leadless module for use with sockets.

The TM4100GAD8 is characterized for operation from 0°C to 70°C.