TM4100EAD9

` Organization . . . 4194304 * 9
` Single 5-V Power Supply (±10% Tolerance)
` 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets
` Utilizes Nine 4-Megabit Dynamic RAMs in Plastic Small-Outline J-Lead Packages (SOJs)
` Long Refresh Period 16 ms (1024 Cycles)
` All Inputs, Outputs, and Clocks Fully TTL Compatible
` 3-State Outputs
` Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR (tRAC) (tCAC) (tAA) WRITE CYCLE (MAX) (MAX) (MAX) (MIN) '4100EAD9-60 60 ns 15 ns 30 ns 110 ns '4100EAD9-70 70 ns 18 ns 35 ns 130 ns '4100EAD9-80 80 ns 20 ns 40 ns 150 ns
` Common CAS Control for Eight Common Data-In and Data-Out Lines
` Separate CAS Control for One Separate Pair of Data-In and Data-Out Lines
` Low Power Dissipation
` Operating Free-Air Temperature Range 0°C to 70°C

Voltage range on any pin (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V
Voltage range on VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V
Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 W
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to 125°C


† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values are with respect to VSS.

The TM4100EAD9 is a dynamic random-access memory module organized as 4194304 × 9 [bit nine (D9, Q9) is generally used for parity and is controlled by CAS9] in a 30-pin leadless single in-line memory module (SIMM).

This module is composed of nine TMS44100DJ, 4194304 × 1-bit dynamic RAMs (DRAMs) each in a 20/26-lead plastic small-outline J-lead package (SOJ) mounted on a substrate with decoupling capacitors.

The TM4100EAD9 is characterized for operation from 0°C to 70°C and is available in the AD single-sided, leadless module for use with sockets.