Features: ` Organization TM2EP64DxN . . . 2097152 * 64 Bits TM2EP72DxN . . . 2097152 * 72 Bits TM4EP64DxN . . . 4194304 * 64 Bits TM4EP72DxN . . . 4194304 * 72 Bits` Single 3.3-V Power Supply (±10% Tolerance)` TM2EP64DxN - Uses Eight 16M-Bit (2M*8-Bit) Dynamic Random Access Memories (DRAMs) in...
TM2EP64DJN: Features: ` Organization TM2EP64DxN . . . 2097152 * 64 Bits TM2EP72DxN . . . 2097152 * 72 Bits TM4EP64DxN . . . 4194304 * 64 Bits TM4EP72DxN . . . 4194304 * 72 Bits` Single 3.3-V Power Supply (±...
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Features: ` Organization TM2xJ64xPN-xx . . . 2097152 * 64 Bits` Single 3.3-V Power Supply (±10% T...
Features: ` Organization TM2xJ64xPN-xx . . . 2097152 * 64 Bits` Single 3.3-V Power Supply (±10% T...
Features: ` Organization TM2EP64DxN . . . 2097152 * 64 Bits TM2EP72DxN . . . 2097152 * 72 Bits ...
Supply voltage range, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to 4.6 V
Voltage range on any pin (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to 4.6 V
Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation: TM2EP64DxN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 W
TM2EP72DxN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 W
TM4EP64DxN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 W
TM4EP72DxN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 W
Ambient temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to 125°C
† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to VSS.
The TM2EP64DJN is a 16M-byte, 168-pin, dual-in-line memory module (DIMM). The DIMM is composed of eight TMS427809A, 2097152 byte × 8-bit 2K-refresh EDO DRAMs, each in a 400-mil, 28-pin plastic TSOP (DGC suffix) mounted on a substrate with decoupling capacitors. See the TMS427809A data sheet (literature number SMKS887). The TM2EP64DJN is available with an SOJ package (DZ suffix). The TM2EP72DPN is a 16M-byte, 168-pin DIMM. The DIMM is composed of nine TMS427809A, 2097152 byte × 8-bit 2K-refresh EDO DRAMs, mounted on a substrate with decoupling capacitors. See the MS427809A data sheet (literature number SMKS887). The TM2EP72DJN is available with an SOJ package (DZ suffix).
The TM2EP64DJN is a 32M-byte, 168-pin, dual-in-line memory module (DIMM). The DIMM is composed of sixteen TMS427809A, 2097152 × 8-bit 2K-refresh EDO DRAMs, mounted on a substrate with decoupling capacitors. The TM4EP64DJN is available with an SOJ package (DZ suffix).
The TM2EP64DJN is a 32M-byte, 168-pin DIMM. The DIMM is composed of 18 TMS427809A, 2097152 × 8-bit 2K-refresh EDO DRAMs, mounted on a substrate with decoupling capacitors. See the TMS427809A data sheet literature number SMKS887). The TM4EP72DJN is available with an SOJ package (DZ suffix).