TLP798G

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
Relay Type: Relay
Packaging: Tube
Mounting Type: Through Hole
Termination Style: PC Pin
Package / Case: 6-DIP (0.300", 7.62mm)
Supplier Device Package: 6-DIP
Load Current: 150mA
Voltage - Load: 0 ~ 400 V
On-State Resistance: 12 Ohm
Voltage - Input: 1.4VDC
Manufacturer: Toshiba
Series: TLP798G


Description

The TLP798G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package (DIP6). The TLP798G is a bi-directional switch which can replace mechanical relays in many applications. The feature of TLP798G are as follows: (1)Peak offstate voltage: 400 V (min.); (2)On-state current: 150 mA (max.) (A connection); (3)On-state resistance: 12(max.) (A connection); (4)Isolation voltage: 5000 Vrms (min.) (A connection); (5)Isolation Thickness: 0.4 mm (min.).

The absolute maximum ratings of the TLP798G are: (1)forward current: 30mA; (2)forward current derating (Ta 25°C): -0.3mA / °C; (3)peak forward current (100 s pulse, 100 pps): 1A; (4)reverse voltage: 5V; (5)junction temperature: 125°C; (6)off-state output terminal voltage: 400V; (7)on-state rms current A connection: 150mA; (8)on-state current derating (Ta 25°C): -1.5mA / °C; (9)junction temperature: 125 °C ; (10)storage temperature range: -55~125 °C; (11)operating temperature range: -40~85 °C; (12)lead soldering temperature (10 s): 260 °C; (13)isolation voltage (AC, 1 min., R.H. 60%) (Note 2): 5000 Vrms.

The following is about the electrical characteristics of TLP798G: (1)forward voltage: 1.2V min, 1.4V typical and 1.7V max at IF = 10mA; (2)reverse current: 10A max at VR = 3V; (3)capacitance: 30pF typical at V = 0, f = 1 MHz; (4)off-state current: 1A max at VOFF = 400V; (5)capacitance: 150pF at V = 0, f = 1 MHz; (6)trigger LED current: 1mA typical and 5mA max at ION = 150mA; (7)capacitance input to output: 0.8pF typical at VS = 0, f = 1MHz; (8)isolation voltage: 10000Vrms typical at AC, 1 second.