TLP701

Note 1: Pulse width PW 1 s, 300 pps
Note 2: Exponential waveform pulse width PW 2 s, f 15 kHz
Note 3: Exponential waveform IOPH −0.3 A ( 2 s), IOPL +0.3 A ( 2 s),Ta =100 °C
Note 4: For the effective lead soldering area
Note 5: Device considered a two-terminal device: pins 1, 2 and 3 paired with pins 4, 5 and 6 respectively.
Note 6: A ceramic capacitor (0.1 F) should be connected from pin 6 to pin 4 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm.

TLP701 consists of a GaAℓAs light-emitting diode and an integrated photodetector.

This unit is 6-lead SDIP package. The TLP701 is 50% smaller than the 8-pin DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification.

The TLP701 is suitable for gate driving circuits for IGBTs or power MOSFETs.

In particular, the TLP701 is capable of "direct" gate driving of low-power IGBTs.