Features: • Switching speed: tpHL = 0.3s (typ.)
tpLH = 0.5s (typ.)(RL=1.9k)
• TTL compatible
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065: 2002,
Certificate no. 8869
BS EN60950-1: 2002,
Certificate no. 8870
• Isolation voltage: 5000Vrms(min.)
• Option(D4)type
VDE approved: DIN EN 60747-5-2,
Certificate no. 40009302
Maximum operating insulation voltage: 890VPK
Highest permissible over voltage: 8000VPK
(Note) When a EN 60747-5-2 approved type is needed, please designate the "Option(D4)"
• Creepage distance: 6.4mm(min.)
Clearance: 6.4mm(min.)
Insulation thickness: 0.4mm(min.)Pinout
Specifications
| Characteristic |
Symbol |
Rating |
Unit |
| LED |
Forward current (Note 1)
Pulse forward current (Note 2)
Peak transient forward current (Note 3)
Reverse voltage
Diode power dissipation (Note 4) |
IF
IFP
IFPT
VR
PD |
25
50
1
5
45 |
mA
mA
A
V
mW |
| Detector |
Output current
Peak output current
Output voltage
Supply voltage |
IO
IOP
VO
VCC |
8
16
−0.5~15
−0.5~15 |
mA
mA
V
V |
Base current
Output power dissipation (Note 5)
Emitter−base reverse voltage |
IB
PO
VEB |
5
100
5 |
mA
mW
V |
Operating temperature range
Storage temperature range
Lead solder temperature(10s) (Note 6)
Isolation voltage (AC,1min.,R.H. 60%) (Note 7) |
Topr
Tstg
Tsol
BVS |
−55~100
−55~125
260
5000 |
Vrms |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. eliability test report and estimated failure rate, etc).
(Note 1) Derate 0.8mA above 70
(Note 2) 50% duty cycle,1ms pulse width.
Derate 1.6mA / above 70
(Note 3) Pulse width 1s,300pps.
(Note 4) Derate 0.9mW / above 70
(Note 5) Derate 2mW / above 70
(Note 6) Soldering portion of lead : up to 2mm from the body of the device.
(Note 7) Device considered a two terminal device: Pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together.
DescriptionThe TOSHIBA TLP751 consists of GaAℓAs high−output light emitting diode and a high speed detector of one chip photo diode− transistor. This unit is 8−lead DIP.
TLP751 has internal base connection. This base pin should be used for analog application or enable operation. If base pin is open, output signal will be noisy by environmental condition. For this case, TLP750 is suitable.
TLP751 Data Sheet
