Features: • Switching speed: tpHL=0.3s(typ.)
• Switching speed: tpLH=0.5s(typ.)(RL=1.9k)
• UL recognized: UL1577, file No. E67349
• BSI approved: BS EN60065: 2002,
Certificate No.8869
BS EN60950-1: 2002,
Certificate No.8870
• Isolation voltage: 5000Vrms(min.)
• Option(d4)type
VDE approved: DIN EN 60747-5-2,
Certificate No. 40009302
Maximum operating insulation voltage: 890VPK
Highest permissible over voltage: 8000VPK
(Note) When a EN 60747-5-2 approved type is needed,please designate the "Option(D4)"
• Creepage distance: 6.4mm(min.)
Clearance: 6.4mm(min.)
Insulation thickness: 0.4mm(min.)Pinout
Specifications
|
CHARACTERISTIC |
SYMBOL |
RATING |
UNIT |
|
LED |
Forward Current (Note 1) |
IF |
25 |
mA |
| Forward Current Derating (Note 1) |
IFP |
50 |
mA |
| Peak transient forward current (Note 3) |
IFPT |
1 |
A |
| Reverse Voltage |
VR |
5 |
V |
| Diode power dissipation (Note 4) |
PD |
45 |
mW |
|
DETECTOR |
Output current |
IO |
8 |
mA |
| Peak output current |
IOP |
16 |
mA |
| Output voltage VO ?0.5~20 V |
VO |
-0.5~20 |
V |
| Supply voltage |
VCC |
-0.5~20 |
V |
| Output power dissipation (Note 5) |
PO |
100 |
mW |
| Storage Temperature Range |
Tstg |
-55~125 |
|
| Operating Temperature Range |
Topr |
-55~100 |
|
| Lead Soldering Temperature (10 s)(Note 6) |
Tsol |
260 |
|
| Isolation voltage (AC, 1 min., R.H. 60%) (Note 7) |
BVS |
5000 |
Vrms |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(Note 1) Derate 0.8mA above 70.
(Note 2) 50% duty cycle,1ms pulse width.Derate 1.6mA / above 70.
(Note 3) Pulse width 1s, 300pps.
(Note 4) Derate 0.9mW / above 70.
(Note 5) Derate 2mW / above 70.
(Note 6) Soldering portion of lead: up to 2mm from body of the devise.
(Note 7) Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together.
DescriptionThe TOSHIBA TLP750 consists of GaAℓAs high−output light emitting diode and a high speed detector of one chip photo diode−transistor.This unit is 8−lead DIP.
TLP750 has no internal base connection, and is suitable for application in noisy environmental conditions.
TLP750 Data Sheet
