TLP722D4MAT17P1

The TLP722D4MAT17P1 is designed as toshiba photocoupler which consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP. It has two features. (1)Its collector to emitter voltage would be min 55V. (2)Its current transfer ratio would be min 50% and rank GB would be min 100%. Those are all the main features.

Some absolute maximum ratings of TLP722D4MAT17P1 have been concluded into several points as follow. (1)Its forward current would be 60mA. (2)Its peak forward current would be 1A. (3)Its reverse voltage would be 5V. (4)Its collector to emitter voltage would be 55V. (5)Its emitter to collector voltage would be 7V. (6)Its collector current would be 50mA. (7)Its power dissipation would be 150mW. (8)Its storage temperature range would be from -55°C to 125°C. (9)Its operating temperature range would be from -40°C to 100°C. (10)Its lead soldering temperature would be 260°C. (11)Its total package power dissipation would be 250mW. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some individual electrical characteristics of TLP722D4MAT17P1 are concluded as follow. (1)Its forward voltage would be min 1.0V and typ 1.15V and max 1.3V. (2)Its reverse current would be max 10uA. (3)Its LED capacitance would be 30pF typ. (4)Its collector to emitter breakdown voltage would be min 55V. (5)Its emitter to collector breakdown voltage would be min 7V. (6)Its collector dark current would be typ 0.01uA and max 0.1uA.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information of TLP722D4MAT17P1 please contact us for details. Thank you!