TLP1002A

The TLP1002A is designed as toshiba photointerrupter which has a GaAs infrared LED with high sensitive and high gain silicon photo IC.

TLP1002A has nine features. (1)One side mounting type. (2)Gap 5mm. (3)Resolution slit width 1mm. (4)Digital output (with a pull-up resistor). (5)Built-in schmitt trigger circuit. (6)Threshold input current is max 3mA at Ta=25°C. (7)Operating supply voltage is from 4.5V to 17V. (8)Fast response speed. (9)Detector side is of visible light cut type. Those are all the main features.

Some absolute maximum ratings of TLP1002A have been concluded into several points as follow. (1)Its forward current would be 50mA. (2)Its forward current derating would be -0.33mA/°C. (3)Its reverse voltage would be 5V. (4)Its supply voltage would be 17V. (5)Its output current would be 50mA. (6)Its power dissipation would be 250mW. (7)Its power dissipation derating would be -3.33mW/°C. (8)Its operating temperature range would be from -25°C to 85°C. (9)Its storage temperature range would be from -40°C to 100°C. (10)Its soldering temperature would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of TLP1002A are concluded as follow. (1)Its forward current would be min 1.00V and typ 1.15V and max 1.30V. (2)Its reverse current would be max 10uA. (3)Its peak emitter wavelength would be typ 940nm. (4)Its low level supply current would be max 6.0mA. (5)Its high level supply current would be max 3.0mA. (6)Its low level output voltage would be typ 0.07V and max 0.3V. (7)Its high level output current would be max 15uA. (8)Its peak sensitivity wavelength would be typ 900nm. (9)Its threshold input current low to high would be max 6mA. (10)Its hysteresis ratio would be typ 0.67. And so on. If you have any question or suggestion or want to know more information about TLP1002A please contact us for details. Thank you!