Features: • High radiant power: Po = 18mW(typ.) at IF = 50mA• Wide half−angle value: 1/2 = ±21°(typ.)• High−speed response: tr, tf = 30ns(typ.)• Light source for remote control• Designed for transmission of wireless AV signals• Designed for highͨ...
TLN225F: Features: • High radiant power: Po = 18mW(typ.) at IF = 50mA• Wide half−angle value: 1/2 = ±21°(typ.)• High−speed response: tr, tf = 30ns(typ.)• Light source for ...
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Parameter |
Symbol |
Rating |
Unit |
Forward current |
IF |
100 |
mA |
Pulse forward current |
IFP |
1000 (Note 1) |
mA |
Power dissipation |
PD |
220 |
mW |
Reverse voltage |
VR |
4 |
V |
Operating temperature |
Topr |
−25~85 |
|
Storage temperature |
Tstg |
−30~100 |
|
Soldering temperature(5s) |
Tsol |
260 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).