TLN201F

Features: • To−18 metal package.• High radiant power: Po = 5mW(typ.)• High radiant intensity: IE = 35mW / sr(typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible.• Highly reliable due to hermetic seal&...

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SeekIC No. : 004521428 Detail

TLN201F: Features: • To−18 metal package.• High radiant power: Po = 5mW(typ.)• High radiant intensity: IE = 35mW / sr(typ.) • Excellent radiant−intensity linearity. Modula...

floor Price/Ceiling Price

Part Number:
TLN201F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

• To−18 metal package.
• High radiant power: Po = 5mW(typ.)
• High radiant intensity: IE = 35mW / sr(typ.)
• Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible.
• Highly reliable due to hermetic seal
• Same external shape as TPS708(F) photodiode



Specifications

Characteristic Symbol Rating Unit
Forward current IF 100 mA
Forward current derating (Ta > 25) IF / -1 mA/
Pulse forward current (Note 1) IFP 1 A
Reverse voltage VR 5 V
Operating temperature range Topr −40~125
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).

Note 1: Pulse width 100s,repetitive frequency = 100Hz



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