TLN115A(F) Selling Leads, Price trend, TLN115A(F) DataSheet download, circuit diagram from SeekIC.com

Features: • High radiant intensity: IE = 26mW / sr (typ.)• Wide half−angle value: 1/2 = ±21° (typ.)• Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible.• TPS703(F) pin photodiode with resin to screen out visible l...

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SeekIC No. : 004521421 Detail

TLN115A(F): Features: • High radiant intensity: IE = 26mW / sr (typ.)• Wide half−angle value: 1/2 = ±21° (typ.)• Excellent radiant−intensity linearity. Modulation by pulse operatio...

TLN115A(F) Data Sheet

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Part Number:: TLN115A(F)
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Product Details

Description

Features:

• High radiant intensity: I_E = 26mW / sr (typ.)
• Wide half−angle value: 1/2 = ±21° (typ.)
• Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible.
• TPS703(F) pin photodiode with resin to screen out visible light available as detector for remote control

Specifications

Characteristic	Symbol	Rating	Unit
Forward current	I_F	100	mA
Forward current derating (Ta > 25)	I_F/	-1.33	mA/
Pulse forward current (Note 1)	I_FP	1	V
Reverse voltage	V_R	5	mA
Power dissipation	P_D	150	mW
Operating temperature range	T_opr	-20~75
Storage temperature range	T_stg	-30~85

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Pulse width 100 s, repetitive frequency = 100 Hz

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TLN115A(F)

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