DescriptionThe TLN113 is designed as toshiba infrared LED. Typical applications include infrared LED for photo sensor and opto-electronic switch and tape, card readers and rotary encoders and FDD detection. Features of the TLN113 are:(1)high radiant intensity;(2)ideal for use in combination with ...
TLN113: DescriptionThe TLN113 is designed as toshiba infrared LED. Typical applications include infrared LED for photo sensor and opto-electronic switch and tape, card readers and rotary encoders and FDD de...
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The TLN113 is designed as toshiba infrared LED. Typical applications include infrared LED for photo sensor and opto-electronic switch and tape, card readers and rotary encoders and FDD detection.
Features of the TLN113 are:(1)high radiant intensity;(2)ideal for use in combination with TPS613 phototransistor.
The absolute maximum ratings of the TLN113 can be summarized as: (1)forward current:40mA;(2)forward current derating :-0.53mA/°C; (3)pulse forward current:400mA;(4)reverse voltage:5V;(5)operating temperature range:-20°C to 75°C; (6)storage temperature range:-30°C to 100°C.
If you want to know more information such as the electrical characteristics about the TLN113, please download the datasheet in www.seekic.com or www.chinaicmart.com .