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TLN110F

Features: • High radiant intensity: IE = 30mW / sr (typ.)• Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible.• TPS703(F) PIN photodiode with resin to screen out visible light available as detector for remote controlSpecifica...

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TLN110F: Features: • High radiant intensity: IE = 30mW / sr (typ.)• Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible.• TPS703(F) PIN...

TLN110F Data Sheet

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Part Number:
TLN110F
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High radiant intensity: IE = 30mW / sr (typ.)
• Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible.
• TPS703(F) PIN photodiode with resin to screen out visible light available as detector for remote control


Specifications

Characteristic Symbol Rating Unit
Forward current IF 100 mA
Forward current derating (Ta > 25) IF / -1.33 mA/
Pulse forward current IFP (Note 1) 1 A
Reverse voltage VR 5 V
Power dissipation PD 150 mW
Operating temperature range Topr −20~75
Storage temperature range Tstg −30~100

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).

Note 1: Pulse width 100s, repetitive frequency = 100 Hz



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