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TLN108

Features: • TO−18 metal package• High radiant intensity: IE = 20 mW/sr (typ.)• Excellent radiant−intensity linearity. Modulation by pulse operationand high frequency is possible.• Highly reliable due to hermetic sealSpecifications Characteristic Symbol ...

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TLN108: Features: • TO−18 metal package• High radiant intensity: IE = 20 mW/sr (typ.)• Excellent radiant−intensity linearity. Modulation by pulse operationand high frequency is...

TLN108 Data Sheet

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Part Number:
TLN108
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• TO−18 metal package
• High radiant intensity: IE = 20 mW/sr (typ.)
• Excellent radiant−intensity linearity. Modulation by pulse operation
and high frequency is possible.
• Highly reliable due to hermetic seal


Specifications

Characteristic
Symbol
Rating
Unit
Forward current
IF
100
mA
Forward current derating
(Ta > 25)
IF /
−1
mA /
Pulse forward current (Note 1)
IFP
1
A
Reverse voltage
VR
5
V
Operating temperature range
Topr
−40~125
Storage temperature range
Tstg
−55~150
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook ("Handling
Precautions"/"Derating Concept and Methods") and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Pulse width 100s, repetitive frequency = 100 Hz


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