TLN107A

DescriptionThe TLN107A is designed as toshiba infrared LED. Typical applications include infrared LED for photo sensor and opto-electronic switch and infrared rays applied equipment.TLN107A has three features. (1)High radiant intensity. (2)Excellent linearity of radiant intensity and modulation by...

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SeekIC No. : 004521415 Detail

TLN107A: DescriptionThe TLN107A is designed as toshiba infrared LED. Typical applications include infrared LED for photo sensor and opto-electronic switch and infrared rays applied equipment.TLN107A has thre...

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Part Number:
TLN107A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Description

The TLN107A is designed as toshiba infrared LED. Typical applications include infrared LED for photo sensor and opto-electronic switch and infrared rays applied equipment.

TLN107A has three features. (1)High radiant intensity. (2)Excellent linearity of radiant intensity and modulation by pulse operation and high frequency is possible. (3)The same external shape as photo transistors TPS607A and TPS608A and is best suited for combination with them as a photo interrupter. Those are all the main features.

Some absolute maximum ratings of TLN107A have been concluded into several points as follow. (1)Its forward current would be 50mA. (2)Its pulse forward current would be 600mA. (3)Its reverse voltage would be 5V. (4)Its forward current derating would be -0.33mA/°C. (5)Its operating temperature range would be from -25°C to 85°C. (6)Its storage temperature range would be from -40°C to 100°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of TLN107A are concluded as follow. (1)Its forward voltage would be min 1.0V and typ 1.15V and max 1.3V. (2)Its reverse current would be max 10uA. (3)Its radiant intensity would be min 0.8mW/sr. (4)Its radiant power would be typ 2.5mW. (5)Its half value angle would be typ +/-15°. (6)Its capacitance would be typ 30pF. (7)Its peak emission wavelength would be typ 940nm. (8)Its spectral line half width would be typ 50nm. Those are all the main characteristics.

It should be noted that toshiba is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the users, when utilizing these products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a product could cause loss of human life, bodily injury or damage to property. And so on. If you have any question or suggestion or want to know more information of TLN107A please contact us for details. Thank you!




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