TLC116

Features: VERYLOW IGT = 5mA maxLOWIH = 15mA maxSpecifications Symbol Parameter Value Unit IT(RMS) RMS on-state current(360° conduction angle) Tl = 40°C 3 A Ta = 25°C 1.3 (1) ITSM Non repetitive surge peak on-state current( Tj initial = 25°C ) tp = 8.3 ms 31.5 A tp = 10...

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SeekIC No. : 004520412 Detail

TLC116: Features: VERYLOW IGT = 5mA maxLOWIH = 15mA maxSpecifications Symbol Parameter Value Unit IT(RMS) RMS on-state current(360° conduction angle) Tl = 40°C 3 A Ta = 25°C 1.3 (1) IT...

floor Price/Ceiling Price

Part Number:
TLC116
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

VERYLOW IGT = 5mA max
LOWIH = 15mA max



Specifications

Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(360° conduction angle)
Tl = 40°C 3 A
Ta = 25°C 1.3 (1)
ITSM Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp = 8.3 ms 31.5 A
tp = 10 ms 30
I2t I2t
value
tp = 10 ms 4.5 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG = 50mA diG/dt = 0.1A/s
Repetitive
F = 50 Hz
10 A/ms
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 110
°C
°C
Tl Maximum lead temperature for soldering during 4 s at 4.5 mm
from case
230 °C



Description

The TLC116 triac family uses a high perfomance glass passivated PNPN technology.

The absolute maximum ratings of the TLC116 can be summarized as:(1):the symbol is IT(RMS),the parameter is RMS on-state current (360°conduction angle) Tl = 40,the value is 3,the unit is A;(2):the symbol is IT(RMS),the parameter is RMS on-state current (360°conduction angle) Ta = 25,the value is 1.3,the unit is A;(3):the symbol is ITSM,the parameter is non repetitive surge peak on-state current (Tj initial=25) tp=8.3ms,the value is 31.5,the unit is A;(4):the symbol is ITSM,the parameter is non repetitive surge peak on-state current (Tj initial=25) tp=10ms,the value is 30,the unit is A; (5):the symbol is I2t,the parameter is I2t value tp=10ms,the value is 4.5,the unit is A2s;(6):the symbol is dI/dt,the parameter is critical rate of rise of on-state current gate supply:IG =50mA diG/dt=0.1A/s repetitive F=50Hz,the value is 10,the unit is A/s;(7):the symbol is dI/dt,the parameter is critical rate of rise of on-state current gate supply:IG =50mA diG/dt=0.1A/s non repetitive,the value is 50,the unit is A/s;(8):the symbol is Tstg,TJ,the parameter is storage and operating junction temperature range,the value is -40 to +150,-40 to +110,the unit is ;(9):the symbol is TI,the parameter is maximum lead temperature for soldering during 4 s at 4.5 mm from case,the value is 230,the unit is .




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